Detection of traps induced and activated by high field stress in an N-channel VDMOSFET transistor using current deep level transient spectroscopy (CDLTS)

Journal article

Peer reviewed

N. Abboud, Y. Cuminal, A. Foucaran and C. Salame

Microelectronic Engineering, Vol.88(11), pp.3333 - 3337

11/2011

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Title: Detection of traps induced and activated by high field stress in an N-channel VDMOSFET transistor using current deep level transient spectroscopy (CDLTS)
Creators - without role: N. Abboud - Applied Physics Laboratory [Beirut]
Y. Cuminal - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
A. Foucaran - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
C. Salame - Lebanese University
Publication Details: Microelectronic Engineering, Vol.88(11), pp.3333 - 3337
Identifiers: 9944619709311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-01791380