Abstract
The degradation of InGaAsN pin subcell under 1 MeV electrons irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94 % of their original photocurrent after 10 15 cm-2 1 MeV-electrons irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.