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Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.
Journal article   Peer reviewed

Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

Thierry Taliercio, Mathieu Gallart, Pierre Lefebvre, Aurélien Morel, Bernard Gil, Jacques Allègre, Nicolas Grandjean, Jean Massies, Izabella Grzegory and Sylvester Porowsky
Solid State Communications, Vol.117(7)
09/01/2001
DOI: https://doi.org/10.1016/S0038-1098(00)00475-0

Abstract

PACS 78.55.Cr; 78.66.Fd; 78.40.Fy
We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.
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