Crystal reorganization upon annealing of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy.

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Peer reviewed

A. Hierro, J.-M. Ulloa, A. Trampert, J.-M. Chauveau, M.-A. Pinault, E. Tournié, A. Guzman, J.L. Sanchez-Rojas and E. Calleja

Journal of Applied Physics, Vol.94(4)

2003

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Title: Crystal reorganization upon annealing of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy.
Creators - without role: A. Hierro - Universidad Politécnica de Madrid
J.-M. Ulloa - Universidad Politécnica de Madrid
A. Trampert - Paul Drude Institute for Solid State Electronics
J.-M. Chauveau
M.-A. Pinault
E. Tournié - Centre National de la Recherche Scientifique
A. Guzman - Universidad Politécnica de Madrid
J.L. Sanchez-Rojas - Universidad Politécnica de Madrid
E. Calleja - Universidad Politécnica de Madrid
Publication Details: Journal of Applied Physics, Vol.94(4)
Identifiers: 9947181409311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00327145