Résumé
With the continuous advancement of CMOS technologies, soft errors, such as single-node upset (SNU) and double-node upset (DNU), caused by radiation in nanoscale integrated circuits, are becoming increasingly prominent. Meanwhile, transistor aging mitigation is indispensable for long-term robustness enhancement. First, to reduce the impact of radiation on circuits, we propose a novel DNU-recovery latch with low cost, namely, DURLC, only consisting of four dual-input C-elements (CEs) and four clock-gated input-split inverters for the storage of values. Second, we propose a DNU-recovery latch with moderate cost, namely, DURMC, based on seven CEs and four inverters, for convenience to optimize the latch to alleviate aging. The proposed DNU-recovery latch with mitigated aging is called DURMA. The latch employs a high-speed path to reduce delay without sacrificing performance when mitigating aging issues. Finally, we propose an algorithm-based verification method to validate the DNU recovery of the proposed latches. The simulation results show that, compared with the state-of-the-art robust latches, the proposed latches have the advantages of DNU recovery with moderate and even low cost, and meanwhile, aging is effectively mitigated for the DURMA latch.