Correlation functions from multiple solution of the transient Boltzmann equation in semiconductors: Application to noise temperature of holes in silicon

Journal article

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L. Hlou, K. Amechnoue, J. Diyadi, J.-C. Vaissière, L. Varani and A. Moatadid

Journal of Applied Physics, Vol.88(2), pp.838-841

15/07/2000

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Title: Correlation functions from multiple solution of the transient Boltzmann equation in semiconductors: Application to noise temperature of holes in silicon
Creators - without role: L. Hlou - Université Ibn-Tofail
K. Amechnoue - Université Ibn-Tofail
J. Diyadi - Université Ibn-Tofail
J.-C. Vaissière - Université de Montpellier
L. Varani - Université de Montpellier
A. Moatadid - Mohammed V University
Publication Details: Journal of Applied Physics, Vol.88(2), pp.838-841
Identifiers: 9944654109311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-02396266