Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

Jean-Rémy Reboul; Laurent Cerutti; Jean-Baptiste Rodriguez; Pierre Grech; Eric Tournié

doi:10.1063/1.3644983

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Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

Journal article

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Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

Jean-Rémy Reboul, Laurent Cerutti, Jean-Baptiste Rodriguez, Pierre Grech and Eric Tournié

Applied Physics Letters, Vol.99(12)

19/09/2011

DOI: https://doi.org/10.1063/1.3644983

Abstract

We have investigated specifically designed GaSb-based laser diodes epitaxially grown on a Si substrate. We demonstrate continuous-wave operation of these laser diodes emitting near 2 pm up to 35 degrees C with several mW/facet output powers, limited by our experimental setup. Our results open the way to direct monolithic III-V/Si integration.

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Title: Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si
Creators - without role: Jean-Rémy Reboul - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Laurent Cerutti - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Jean-Baptiste Rodriguez - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Pierre Grech - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Eric Tournié - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Publication Details: Applied Physics Letters, Vol.99(12)
Identifiers: 9942081809311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-00641322