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Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy
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Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy

Aurélien Morel, Thierry Taliercio, Pierre Lefebvre, Mathieu Gallart, Bernard Gil, Nicolas Grandjean, Jean Massies, Izabella Grzegory et Sylvester Porowski
Materials science & engineering. B, Solid-state materials for advanced technology, Vol.82(1), pp.173-177
22/05/2001

Résumé

Exciton–polariton modes GaN film Molecular beam epitaxy

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