Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors

Journal article

Peer reviewed

M. Valenza, J.C. Vildeuil and D. Rigaud

Journal of Applied Physics, Vol.91(5), pp.3318-3323

2002

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Title: Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors
Creators - without role: M. Valenza - Université de Montpellier
J.C. Vildeuil - Université de Montpellier
D. Rigaud - Université de Montpellier
Publication Details: Journal of Applied Physics, Vol.91(5), pp.3318-3323
Identifiers: 9941353609311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00327051