Comparison of nmos and pmos transistor sensitivity to seu in srams by device simulation

Journal article

Peer reviewed

K. Castellani-Coulie, Bruno Sagnes, Frédéric Saigné, J-M. Palau, M-C. Calvet, P.E. Dodd and F.W. Sexton

IEEE Transactions on Nuclear Science, Vol.50(6), pp.2239-2244

12/2003

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Title: Comparison of nmos and pmos transistor sensitivity to seu in srams by device simulation
Creators - without role: K. Castellani-Coulie - Université de Montpellier
Bruno Sagnes - Université de Montpellier
Frédéric Saigné - Université de Montpellier
J-M. Palau - Université de Montpellier
M-C. Calvet
P.E. Dodd - Sandia National Laboratories
F.W. Sexton - Sandia National Laboratories
Publication Details: IEEE Transactions on Nuclear Science, Vol.50(6), pp.2239-2244
Identifiers: 9943709809311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-02025137