- Title
- Comparison between positive and negative bias stress on N‐channel VDMOSFET transistors
- Creators - without role
- N. Abboud - Applied Physics Laboratory [Beirut]R. Habch - Lebanese UniversityY. Cuminal - Université de Montpellier, Institut d'Electronique et des Systèmes - IESA. Foucaran - Université de Montpellier, Institut d'Electronique et des Systèmes - IESC. Salame - Lebanese University
- Publication Details
- International Journal of Structural Integrity, Vol.4(2), pp.267 - 274
- Identifiers
- 9944723609311
- Academic Unit
- Institut d'Electronique et des Systèmes - IES
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-01791436
Journal article
Comparison between positive and negative bias stress on N‐channel VDMOSFET transistors
International Journal of Structural Integrity, Vol.4(2), pp.267 - 274
24/05/2013
Metrics
1 Record Views