- Title
- Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain
- Creators - without role
- Jean-Robert Manouvrier - STMicroelectronics [Crolles]Pascal Fonteneau - STMicroelectronicsCharles-Alexandre Legrand - STMicroelectronicsPascal Nouet - Laboratoire d'Informatique, de Robotique et de Microélectronique de MontpellierFlorence Azaïs - Conception et Test de Systèmes MICroélectroniques
- Publication Details
- Microelectronics Reliability, Vol.49(12), pp.1424-1432
- Identifiers
- 9943799009311
- Academic Unit
- Laboratoire d'Informatique de Robotique et de Microélectronique de Mtp - LIRMM
- Language
- English
- Resource Type
- Journal article
- Local Fields
- lirmm-00435866
Journal article
Characterization of the Transient Behavior of Gated/STI Diodes and their Associated BJT in the CDM Time Domain
Microelectronics Reliability, Vol.49(12), pp.1424-1432
12/2009
Metrics
1 Record Views