Résumé
We report on mobility spectrum analysis of electrical transport in a GaSb/InAs superlattice (SL) grown on GaSb substrate. Despite domineering contribution to conduction from the substrate, it was possible to discern and characterize carriers from SL. A single electron specie with an ambient temperature mobility of similar to 10(4) cm(2)/V s was found to emanate from SL. We show that this carrier has an activation energy of 0.27 eV and is associated with the SL band gap. (C) 2008 American Institute of Physics.