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Characterization and modeling of laser-induced single-event burn-out in SiC power diodes
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Characterization and modeling of laser-induced single-event burn-out in SiC power diodes

Nogaye Mbaye, Vincent Pouget, Frédéric Darracq et D. Lewis
Microelectronics Reliability, Vol.53(9-11), pp.1315-1319
11/2013

Résumé

SiC power diode Laser SEB
We present results of laser testing of radiation-induced single event burn-out (SEB) in two 600 V Silicon Carbide Schottky power diodes using two-photon absorption at blue wavelength. Transient currents and destructive events are observed and analyzed. A simple physical model of the laser induced current in the tested devices is proposed to evaluate the impact of experimental parameters on the occurrence of an SEB.

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