Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2-and 3.5-kV 4H-SiC JBS Diodes : Silicon carbide devices and technology

Pierre Brosselard; Nicolas Camara; Viorel Banu; Xavier Jorda; Miquel Vellvehi; Philippe Godignon; José Millan

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Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2-and 3.5-kV 4H-SiC JBS Diodes : Silicon carbide devices and technology

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Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2-and 3.5-kV 4H-SiC JBS Diodes : Silicon carbide devices and technology

Pierre Brosselard, Nicolas Camara, Viorel Banu, Xavier Jorda, Miquel Vellvehi, Philippe Godignon et José Millan

IEEE transactions on electron devices, Vol.55(8), pp.1847-1856

2008

Résumé

Applied sciences

Circuit properties

Diodes

Electric, optical and optoelectronic circuits

Electronic circuits

Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Switching, multiplexing, switched capacity circuits

Indicateurs

1 Consultations de la notice

Détails

Titre: Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2-and 3.5-kV 4H-SiC JBS Diodes : Silicon carbide devices and technology
Créateurs - sans rôle: Pierre Brosselard - Centro Nacional de Microelectrónica-Instituto de Microelectrónica de Barcelona-Consejo Superior de Investigaciones Científicas, National Center of Microelectronics, 08193 Barcelona, Spain
Nicolas Camara - Centro Nacional de Microelectrónica-Instituto de Microelectrónica de Barcelona-Consejo Superior de Investigaciones Científicas, National Center of Microelectronics, 08193 Barcelona, Spain
Viorel Banu - Centro Nacional de Microelectrónica-Instituto de Microelectrónica de Barcelona-Consejo Superior de Investigaciones Científicas, National Center of Microelectronics, 08193 Barcelona, Spain
Xavier Jorda - Centro Nacional de Microelectrónica-Instituto de Microelectrónica de Barcelona-Consejo Superior de Investigaciones Científicas, National Center of Microelectronics, 08193 Barcelona, Spain
Miquel Vellvehi - Centro Nacional de Microelectrónica-Instituto de Microelectrónica de Barcelona-Consejo Superior de Investigaciones Científicas, National Center of Microelectronics, 08193 Barcelona, Spain
Philippe Godignon - Consejo Superior de Investigaciones Científicas
José Millan - Centro Nacional de Microelectrónica-Instituto de Microelectrónica de Barcelona-Consejo Superior de Investigaciones Científicas, National Center of Microelectronics, 08193 Barcelona, Spain
Détails de publication: IEEE transactions on electron devices, Vol.55(8), pp.1847-1856
Éditeur: Institute of Electrical and Electronics Engineers
Identifiants: 99162131409311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Journal article