Résumé
We report on the multispectral properties of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices using an nBn heterostructure design. The optical and electrical properties of the midwave and long wave infrared (MWIR-LWIR) absorbing layers are characterized using spectral response and current-voltage measurements, respectively. The dual band response is achieved by changing the polarity of applied bias. The spectral response shows a significant change in the LWIR to MWIR ratio within a very small bias range (similar to 100 mV), making it compatible with commercially available readout integrated circuits. (c) 2007 American Institute of Physics.