Backgating effect in III–V MESFET’s: A physical model

Journal article

Peer reviewed

J.C. Manifacier and R. Ardebili

Solid-State Electronics, Vol.91, pp.13 - 18

01/2014

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Title: Backgating effect in III–V MESFET’s: A physical model
Creators - without role: J.C. Manifacier - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
R. Ardebili - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Publication Details: Solid-State Electronics, Vol.91, pp.13 - 18
Identifiers: 9944213909311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-01643155