BULK AND CONTACT EFFECTS IN P(+)-SI-N(+) SEMIINSULATING GAAS STRUCTURES

Journal article

Peer reviewed

J.-C. Manifacier and R. Ardebili

Journal of Applied Physics, Vol.77(7), pp.3174-3185

04/1995

Abstract

MINORITY-CARRIER INJECTION

RELAXATION SEMICONDUCTORS

NUMERICAL-SIMULATION

OHMIC BEHAVIOR

MESFETS

TRANSPORT

CONDUCTION

TRAPS

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Title: BULK AND CONTACT EFFECTS IN P(+)-SI-N(+) SEMIINSULATING GAAS STRUCTURES
Creators - without role: J.-C. Manifacier - Université de Montpellier
R. Ardebili - Université de Montpellier
Publication Details: Journal of Applied Physics, Vol.77(7), pp.3174-3185
Identifiers: 9938866809311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00323160