Abstract
We show that spurious peaks in velocity profiles emerging from hydrodynamic simulators of submicron n+nn+ Si structures are washed out by using a field-dependent thermal conductivity calculated within a correlation function formalism.
- Title
- Avoiding spurious velocity overshoots in hydrodynamic simulations of deep submicron devices by a physical modelling of heat transport
- Creators - without role
- L. Varani - Université de MontpellierC. Palermo - Université de MontpellierJ.-C. Vaissière - Université de MontpellierA. Greiner - University of FreiburgL. Reggiani - Istituto Nazionale di Fisica Nucleare, Sezione di Lecce
- Publication Details
- Semiconductor Science and Technology, Vol.19, pp.S142-S144
- Identifiers
- 9945967209311
- Academic Unit
- Université de Montpellier
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-00331018