Résumé
The aim of this paper is to precise the interest of scanning force microscopy (SFM) observations on gallium nitride films. These observations concern the atomic force microscopy (AFM) and, more especially, the electrostatic force microscopy (EFM) and electrical force gradient microscopy (EFGM). First of all, the EFM and EFGM method are recalled and situated one versus the other. Secondly, a rapid review of the literature results is made, in order to precise which observations could be expected. Finally, on various gallium nitride films, we show: (i) the obtained performances in terms of spatial resolution and voltage sensitivity and (ii) observations using the EFM and EFGM methods and their interpretation.