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Arrays of doped and un-doped semiconductors for sensor applications
Article de revue   Avec comité de lecture

Arrays of doped and un-doped semiconductors for sensor applications

Thierry Taliercio, Vilianne N'Tsame Guilengui et Eric Tournie
Applied physics. A, Materials science & processing, Vol.109(4), pp.943-947
01/12/2012

Résumé

Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Science & Technology Technology
This numerical investigation proposes to use a lamellar grating of doped semiconductors as the active region of a nanoplasmonic biosensing device. Working with highly doped semiconductors instead of a metal allows controlling the value of the plasma frequency. It is possible to reach a plasma frequency close to the range of detection of the sensor to improve its sensitivity. A red shift of the plasmonic resonance of 10.2 nm for a 10(-2) refractive index unit increase can be achieved.

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