- Title
- Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts
- Creators - without role
- Nicolas Thierry-Jebali - Institut National des Sciences Appliquées de LyonMihai Lazar - Institut National des Sciences Appliquées de LyonA. Vo-Ha - Laboratoire des Multimatériaux et InterfacesD. Carole - Laboratoire des Multimatériaux et InterfacesV. Soulière - Laboratoire des Multimatériaux et InterfacesA Henry - Linköping UniversityDominique Planson - Institut National des Sciences Appliquées de LyonGabriel Ferro - Laboratoire des Multimatériaux et InterfacesL. Konczewicz - Université de Montpellier, Laboratoire Charles Coulomb - L2CSylvie Contreras - Université de Montpellier, Laboratoire Charles Coulomb - L2CC. Brylinski - Laboratoire des Multimatériaux et InterfacesPierre Brosselard - Laboratoire Ampère
- Publication Details
- Materials Science Forum
- Series
- Silicon Carbide and Related Materials 2013
- Identifiers
- 9939703809311
- Academic Unit
- Laboratoire Charles Coulomb - L2C
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-01987147
Journal article
Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts
Materials Science Forum
Silicon Carbide and Related Materials 2013
2014
Metrics
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