AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

P Sai; Dmytro But; I Yahniuk; M Grabowski; M Sakowicz; P Kruszewski; P Prystawko; A Khachapuridze; K Nowakowski-Szkudlarek; J Przybytek; P Wiśniewski; B Stonio; M Słowikowski; Sergey Rumyantsev; Wojciech Knap; G Cywiński

doi:10.1088/1361-6641/aaf4a7

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AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

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AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

P Sai, Dmytro But, I Yahniuk, M Grabowski, M Sakowicz, P Kruszewski, P Prystawko, A Khachapuridze, K Nowakowski-Szkudlarek, J Przybytek, …

Semiconductor Science and Technology, Vol.34(2)

01/02/2019

DOI: https://doi.org/10.1088/1361-6641/aaf4a7

Abstract

We report on the investigations of AlGaN/GaN field effect transistors with two lateral Schottky barrier gates on the sides of the two-dimensional electron gas. This kind of 'EdgeFET' allowed us to efficiently control the current flow in the 2DEG conduction channel. Moreover, due to depletion, regions at a certain range of reverse biasing form a nanowire, which is beneficial for the adjustable resonant THz detection. Our studies of DC characteristics and photoresponse in the sub-terahertz frequency confirm the validity of the approach.

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Title: AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
Creators - without role: P Sai - Warsaw University of Technology
Dmytro But - Warsaw University of Technology
I Yahniuk - Institute of High Pressure Physics
M Grabowski - Institute of High Pressure Physics
M Sakowicz - Institute of High Pressure Physics
P Kruszewski - Institute of High Pressure Physics
P Prystawko - Institute of High Pressure Physics
A Khachapuridze - Institute of High Pressure Physics
K Nowakowski-Szkudlarek - Institute of High Pressure Physics
J Przybytek - Institute of High Pressure Physics
P Wiśniewski - Warsaw University of Technology
B Stonio - Warsaw University of Technology
M Słowikowski - Warsaw University of Technology
Sergey Rumyantsev - ITMO University
Wojciech Knap - Laboratoire Charles Coulomb
G Cywiński - Warsaw University of Technology
Publication Details: Semiconductor Science and Technology, Vol.34(2)
Grant note: This project was partially supported by the National Science Centre, Poland allocated on the basis of Grant No. 2016/22/E/ST7/00526, by the ERANET RUS PLUS–TERASENS project, and by the Foundation for Polish Science through grants TEAM/2016-3/25, TEAM/2016-3/26 and MAB/2018/9 (the latter for ‘Center for Terahertz Research and Applications (CENTERA)’ project, carried out within the ‘International Research Agendas’ programme co-financed by the European Union under the European Regional Development Fund.)
Identifiers: 9937465009311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Journal article
Local Fields: hal-04840387