Résumé
The paper presents an overview of semiconductor laser and detector structures for the Mid-Infrared wavelength range (3 - 5 microns). Recent progresses in new laser systems are described: intersubband InAs/AlSb quantum cascade lasers (QCLs), interband type-II "W" lasers, and interband quantum cascade lasers (ICLs). All these laser structures employing AlSb, InAs, GaSb and related alloys have the potentiality to reach the challenge of room temperature operation in continuous wave for modern applications. The description of detector structures is focused on interband transition systems based on bulk InAs0.9Sb0.1, type-III InAs/GaSb superlattices or InSb/GaSb quantum dots.