- Title
- A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation
- Creators - without role
- F. Lime - Universidad Rovira i VirgiliR. Ritzenthaler - Universidad Rovira i VirgiliM. Ricoma - Universitat Autònoma de BarcelonaF. Martinez - Université de Montpellier, Institut d'Electronique et des Systèmes - IESF. Pascal - Université de Montpellier, Institut d'Electronique et des Systèmes - IESE. Miranda - Universitat Autònoma de BarcelonaO. Faynot - CEA GrenobleB. Iñiguez - Universidad Rovira i Virgili
- Publication Details
- Solid-State Electronics, Vol.57(1), pp.61 - 66
- Identifiers
- 9938409609311
- Academic Unit
- Institut d'Electronique et des Systèmes - IES
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-01653010
Journal article
A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation
Solid-State Electronics, Vol.57(1), pp.61 - 66
03/2011
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