A model noise temperature for nonlinear transport in semiconductors

Journal article

Peer reviewed

L. Varani, P. Houlet, J.-C. Vaissière, J.-P. Nougier, E. Starikov, V. Gruzhinskis, P. Shiktorov, L. Reggiani and L. Hlou

Journal of Applied Physics, Vol.80(9), pp.5067-5075

11/1996

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Title: A model noise temperature for nonlinear transport in semiconductors
Creators - without role: L. Varani - Université de Montpellier
P. Houlet - Université de Montpellier
J.-C. Vaissière - Université de Montpellier
J.-P. Nougier - Université de Montpellier
E. Starikov - Lithuanian Academy of Sciences
V. Gruzhinskis - Lithuanian Academy of Sciences
P. Shiktorov - Lithuanian Academy of Sciences
L. Reggiani - Istituto Nazionale per la Fisica della Materia
L. Hlou - Faculté des Sciences [Kenitra]
Publication Details: Journal of Applied Physics, Vol.80(9), pp.5067-5075
Identifiers: 9943360009311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-02390131