Résumé
Specific developments on technological steps involved in the fabrication of antimony based diode lasers have been carried out. Evident improvements of the performances have been achieved. High power, low threshold, room temperature (RT) and continuous wave (CW) operation laser diodes emitting around 2.4 microns, based on the InGaAsSb/AlGaAsSb materials system, have been realized with a 100 micron wide and 1 mm long cavity laser, a maximum output power of 720 mW has been obtained at 285 K.