Résumé
In this work, we show that progress made in the crystal growth and device processing technology of 4H-SiC open the way to the development of Hall sensors presenting a low thermal drift with a large sensitivity (930
V/(A
T)) in a wide temperature range. Above 300
K, low doped 4H-SiC epilayers are working in the exhaustion regime. Transport measurements show a constant value of the carrier density from 300 to 800
K. Simultaneously, the resistivity increases linearly at a rate of 3400
ppm/K between 500 and 800
K leading to the possibility to use the same samples as temperature sensor.