Abstract
Operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.36 μm is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A circular TEM00 low-divergence laser operation is demonstrated in continuous-wave mode operation from 268 up to 308K. A threshold of 5.5 kW/cm2 at 268K has been measured.