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1/f noise measurements in n-channel MOSFET's processed in 0,25 µm technology- Extraction of BSIM3v3 noise parameters
Journal article   Peer reviewed

1/f noise measurements in n-channel MOSFET's processed in 0,25 µm technology- Extraction of BSIM3v3 noise parameters

A. Akue Allogo, M. Demurcia, J.C. Vildeuil, M. Valenza, P. Llinares and D. Cottin
Solid-State Electronics, Vol.46, pp.361-366
2002
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