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1550-Nm-Pumped InAs-Based Terahertz Modulator Integrated in a WR1.0 Waveguide
 

1550-Nm-Pumped InAs-Based Terahertz Modulator Integrated in a WR1.0 Waveguide

Julien Guise, Hajasoa Ratovo, Fernando Gonzalez-Posada Flores, Pierre Fehlen, Monique Thual, Jean-Claude Simon, Jeffrey Hesler, Theodore Reck, Laurent Cerutti, Jean-Baptiste Rodriguez, …
IEEE Transactions on Terahertz Science and Technology, Vol.16(4), pp.406-416
2026
Optical pumping Optical waveguides Aerospace electronics Optical ring resonators Bandwidth Optical modulation Optical reflection Permittivity Telecommunications Gallium arsenide
We present a terahertz intensity modulator optically controlled at 1550 nm and integrated within a standard hollow-core rectangular waveguide operating in the 0.75–1.1 THz frequency range (WR1.0 standard). The relevant figures of merit for the component are presented; including insertion losses below 5 dB, average modulation depth of 70%, and a modulation bandwidth of 15 MHz. An analytical model relating the photogenerated carrier lifetime to the modulator bandwidth is presented.

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