Résumé
The innovative design of Vertical Cavity Surface Emitting Laser (VCSEL) is very attractive for several specific applications, such as massively parallel optical interconnects or computers, requiring one or twodimensional network configurations of ultra-low threshold lasers. In the aim to realize a full monolithic<br />VCSEL emitting at optical telecommunication wavelengths (1.3-1.55 µm), the semiconductor system AlGaAsSb allows to reach very high reflectivities with Bragg mirrors, which are the key elements of this component. An essential part of this study was consisting to establish parameters of the Molecular Beam Epitaxial (MBE) growth of antimonide compounds on InP and GaSb substrates. Particular attention was kept by AlGaAsSb lattice-matching on InP, because of difficulties involved by a wide miscibility gap occuring at this composition. The choice of GaInSb Multi-Quantum Wells with AlGaAsSb barriers as active layer at 1.55 µm on GaSb has led to lasing emission at room temperature. This result is contituting a<br />first worlwide performance. The realization of highly reflective Bragg mirrors at 1.55 µm and 2 µm wavelengths validates the large potentialities of the AlGaAsSb/AlAsSb semiconductor system for the<br />fabrication VCSELs emitting at near infrared wavelengths. Furthermore, the one-run growth of a 3lambda VCSEL on GaSb substrate is demonstrating the feasibility of fully monolithic VCSELs on GaSb for optical communication applications.