Abstract
This thesis addresses the light-matter interaction in nitride nanostructures embedded inoptical microcavities. By using micro-photoluminescence experiments, we study the optical propertiesof GaN/AlN quantum dots embedded in planar microcavities and those of GaN/AlNquantum wells in AlN microdisks. By placing quantum dots in planar microcavities, we are ableto modify the emission diagram and increase the collection efficiency. The design of the microcavitiesis optimized by using numerical simulations based on transfer matrix method with aninternal emitter. For an AlN microcavity with AlN/AlGaN Bragg mirrors, we show that the collectionefficiency could be theoretical increase by one order of magnitude, which is confirmed byour micro-photoluminescence experiments on single quantum dots. This observation opens theway for advanced studies such as photon correlations experiments in the UV range. The secondpart of our work is devoted to the realization of a micro-laser operating in the deep-UV range atroom-temperature. By using thin GaN/AlN quantum wells (2.8 monolayers), grown on siliconsubstrate and embedded in AlN microdisks, we observe a laser emission at 275 nm under pulsedoptical pumping. This demonstration shows the strong potentiality for future developments ofnitride-on-silicon nano-photonics.