Abstract
This work relates to the development and the study of InAs/GaSb superlattices (SL) infrared photodetector for imaging application in mid-wave infrared domain. After having proposed the particular properties of SL, mainly related to its periodicity, and presented the various performances reached by these devices, the manufacturing process of the detectors is approached. The detecting structures were grown by molecular beam epitaxy were initially characterized. Measurements showed a great crystalline quality as well as a good homogeneity on a wafer 2 inches. From these structures, we carried out the devices photodiodes. In order to overcome the surface leakage currents, which during many years limited the performances of such detectors, we developed a technological process of manufacturing of the pixels, by placing mainly the emphasis on the stage of chemical etching as well as on the protection of the side walls after etching. This study enabled us to place our components at the world state of the art in terms of dark current. Then, thanks to a better comprehension of the physical phenomena dependant on the generation of the currents in the diodes with SR and on fine characterizations (J-V, Hall effect, C-V, measurement of electronic noise) carried out on the manufactured components, this work led to definition and realization of a improved structure for the MWIR. The measurements made on this structure, known as asymmetrical, showed a reduction of one order of magnitude of dark currents, as well as a significant improvement of quantum efficiency.