Abstract
This thesis work focuses on the study of the impact of space radiation on infrared superlattice (SL)photodetectors called T2SL (Type II Superlattice). Even if, today, SL technology has been the subjectof numerous international research studies, leading to the commercialization of T2SL FPAphotodetectors, the effects of radiation on this material are still little known by the scientificcommunities and require investigations to improve our understanding of this subject. After highlighting the properties of SLs and defining the different doses of radiation considered (displacement dose and ionizing dose), two architectures of single-element photodetectors are presented: the photodiode with pi-n configuration and the photodiode with barrier configuration, called bariode. Many studies have been done in these works showing the vast extend of the topic still unexplored. In particular, we observe the influence under irradiation of intrinsic parameters (number of interfaces, cut-off wavelength, thickness of the barrier layer in the case of bariodes) and of parameters extrinsic to the material (size of components, passivation layer). External parameters such as the temperature of the detector, the polarization of the component or the energy of the incident protons also varied during the irradiation in order to bring out the main trends and first conclusions thanks mainly to current-voltage (J-V) measurements on InAs/GaSb and InAs/InAsSb superlattice detectors. The first analytical dark current calculations made it possible to support certain experimental results.