Abstract
Best conversion efficiencies are currently reached with concentrator systems using multijunction solar cells made with III-V materials. The number of junctions tends to increase over the years, always improving the solar spectrum harvesting. For that purpose, narrow bandgap materials are required with specific values easily reachable with GaSb-based quaternary alloys. These multijunction cells are dedicated for operations under concentrated sun light. In such irradiation conditions, the architecture of the cell as well as the front grid contact has be optimized. In this frame, the studies performed at IES aims at designing, manufacturing and characterize III-Sb solar cells. Our latest published results have reported on GaSb and AlGaAsSb single junction solar cells. The ultimate aim of this subject is the conception, fabrication and characterization of tandem and triple-junction cells based on III-Sb alloys and dedicated for a solar concentration of 500 suns.