Abstract
Ceramic coatings are made from metalorganic precursors by a chemical vapour deposition process assisted by pulsed liquid injection (DLICVD). Chromium carbide (CrCx) films are grown in a tubular hot wall reactor from a solution of bis(benzene)chromium in toluene under partial pressure of nitrogen at 475 °C (total pressure set at 50 Torr). Bonding layers are useful on metallic components, such as steels and alloys, with non-oxide ceramic films such as CrCx, to that purpose metallic chromium (Cr) and mixed carbides Cr-Si-C have been made by DLICVD. Furthermore, adding a chlorinated or sulfur based additive (e.g. hexachlorobenzene or thiophenol) in the BBC/toluene solution allows depositing metallic chromium (Cr) at 475 °C. Moreover, using a precursor containing Si and Cr as tetrakis(trimethylsilylmethyl)-chromium in toluene leads to the deposition of Cr-Si-C mixed carbide. Silicon carbide films are made from two precursors (1,3-disilabutane and polysilylethylene) that have been injected either pure or diluted in toluene. A temperature range of 700 to 800 °C has been used under a partial pressure of nitrogen (total pressure of 50 Torr). SiC films are amorphous and contain a small quantity of hydrogen (hydrogen comes from precursor pyrolysis mechanism): a-SiC:H. Films are stoichiometric when pure precursors are injected, and quasi stoichiometric when precursors are diluted in toluene. As deposited coatings are amorphous and become nanocristalline (cubic SiC structure) after annealing at 1000 °C under vacuum. The influences of the solvent (toluene) on the composition, morphology and growth rate are discussed as a function of the chemical system and experimental conditions, in particular reactor gradient conditions such as temperature and precursors concentration in gas phase. Hafnium carbide films are also made using a solution of bis(cyclopentadiényl)diméthyl hafnium in toluene by the same process. Temperature is set to 750 °C and hydrogen partial pressure has been shown useful (total pressure of 50 Torr, 423 sccm of N2 and 77 sccm of H2). As-deposited films are C-rich HfCx and quasi amorphous. They become nanocristalline after annealing at 1000 °C under vacuum. Finally, ceramics multilayer HfC/SiC coatings were deposited by DLICVD at 750 °C under a partial pressure of a mixture of N2/H2. The process allows a good control of the multilayer nanostructure. Thermal stability and high temperature oxidation preliminary tests on SiC and HfC/SiC films are discussed.