Abstract
The increasing miniaturisation of MOS transistors has made RAM memories more and more sensitive to alpha particles emitted by radioactive elements naturally present in the materials used for memory fabrication. Indeed, at ground level, the soft error rate triggered by these particles is comparable to that triggered by neutrons from cosmic rays. The main purpose of this work aims to develop methods to evaluate this rate allowing thereafter suggesting technologies mitigations. Thus, in the context of a theoretical approach, we have developed models to estimate soft errors rate triggered by uranium and thorium chains in secular equilibrium but also disequilibrium state. This requires identification of critical radionuclides those are able to increase the emissivity (and thus the soft error rate) to unacceptable levels during device lifetime. Taking into account disequilibrium state of decay chains in theoretical study provides a realistic approach to the contamination. We have also proposed an experimental method to analyze the radioactive state evolution in materials used for memory fabrication. In this experimental approach, we have combined three complementary measurement techniques: alpha spectroscopy, gamma spectroscopy and ICPMS.