Abstract
This Ph.D work is part of the industrial academic project MEGaN (More Electric Gallium Nitride) involving many French companies (Renault, Schneider Electric, Safran, ID MOS, Valeo, ...), academic institutions (G2Elab, Ampere, SATIE ...) and CEA. MEGaN project aims are to introduce a new technology of the power components based on GaN materials, to increase the performance of the static converters for various applications.This research is highly focused on the integrated driver and other power device peripheral units for GaN-based components. This is done in SOI CMOS XFAB XT018 technology to promote performing in high-frequency and high temperature applications. It involves examining driver's architectures and features, innovative methods to limit problems inherent in high frequency and high temperature (conducted EMI perturbation, delay mismatch, functional limitations ...). After studying the architecture at the scale of the discrete circuits, the integrated circuits are designed in collaboration with the project partners. The integrated circuit is manufactured by foundry XFAB before being characterized and implemented.In particular, the characteristics at high frequency response and high temperature compliance are proposed. The final implementation is conducted in the hybrid power module power with the power components GaN, as close as possible to those for operation at high frequency which is presented in the end of this thesis. The final demonstrator serves several kinds of applications because of its versatility. The thesis is specifically focused on the study of high frequency behavior of the driver and power switches with high switching speed / the driver’s components of an inverter leg.