Abstract
In this thesis, Si/SiGe:C heterojunction bipolar transistors (HBTs) issued from BiCMOS technologies developed for RF, THz and mm-wave applications are investigated. The BiCMOS technology (B55) studied in this work is based on a 55 nm CMOS node and is compared to a previous mature generation (BiCMOS9MW) developed on a 130 nm CMOS node. The main objective of this work is to investigate the impact of X-ray and Gamma-ray irradiations on these devices through Low Frequency Noise measurements. LFN study is considered as a high sensitive and non-destructive measurement technique to investigate the technological development from a generation to another. Technological developments of the B55 technology, collector structures and Emitter-Base dopant activation techniques, are investigated on both DC and excess noises: forward Gummel plots, 1/f noise and Generation-Recombination components respectively. Compact models are extracted for the two excess noise components, the suspected areas of the associated noise sources are located at the E-B surface and periphery. The degradations induced by X-ray and Gamma-ray on both DC measurements (excess Base current) and LFN ones (1/f noise and G-R components) are examined in function of the Total Ionizing Dose (TID). The main result is the higher tolerance of the B55 technology. Moreover, by studying the effects versus base current and geometrical parameters, compact models are developed classically for 1/f noise and, in more innovative ways, for G-R component. The induced LFN sources are suggested to be located in the vicinity of the spacer and STI oxides. A healing effect after annealing processes is also brought to the fore.