Abstract
The presented thesis work, in this manuscript, focuses on the characterization and modeling of the low frequency noise sources in heterojunction bipolar transistors Si/SiGe :C derived from 130 to 55 nm BiCMOS technology used in the production of integrated circuits dedicated for THz domain applications. From measurements versus bias, geometrical parameters (emitter area and perimeter) and temperature, the 1/f noise component, associated to the base current fluctuations, has been fully characterized and the associated sources have been localized. The SPICE compact model parameters have been extracted and compared with those of the literature. For the BiCMOS 130 nm technology, the obtained figure of merit value of 6,8 10-11 µm2 represents the best published result so far in all bipolar transistors. The dispersion study of the 1/f noise component, performed over a complete wafer, allowed us to extend the SPICE type compact modeling. Measured over a large temperature range, the 1/f noise did not show any variations. For the first time, a complete characterization of the 1/f component at the output of the transistors is presented as well as the extraction of SPICE parameters. Regarding the characterization of generation-recombination components (unsystematic presence), a statistical study has showed that transistors with small emitter areas (Ae < 1 µm2) are affected more than the transistors with large emitter areas by the presence of g-r components. Comparison between different technologies shows that these components are much more present in the less mature technologies. When these components have been associated to RTS, time and frequency domain method is implemented. Finally, in some cases, a study at low temperatures was used to extract the activation energy of the traps responsible for the generation-recombination components.