Résumé
Electronic systems in space and terrestrial environments are subjected to a flow of particles of natural origin, which can induce dysfunctions. These particles can cause Single Event Upsets (SEU) in SRAM memories. Although non-destructive, the SEU can have consequences on the equipment functioning in applications requiring a great reliability (airplane, satellite, launcher, medical, etc). Thus, an evaluation of the sensitivity of the component technology is necessary to predict the reliability of a system. In atmospheric environment, the SEU sensitivity is mainly caused by the secondary ions resulting from the nuclear reactions between the neutrons and the atoms of the component. In space environment, the protons with strong energies induce the same effects as the atmospheric neutrons.<br />In our work, a new code of prediction of the rate of SEU has been developed (MC-DASIE) in order to quantify the sensitivity for a given environment and to explore the mechanisms of failures according to technology. This code makes it possible to study various technologies of memories SRAM (Bulk and SOI) in neutron and proton environment between 1 MeV and 1 GeV. Thus, MC-DASIE was used with experiment data to study the effect of integration on the sensitivity of the memories in terrestrial environment, a comparison between the neutron and proton irradiations and the influence of the modeling of the target component on the calculation of the rate of SEU.