Résumé
This study consist in the development of a high frequency insulated DC/DC converter based on GaN power devices. The goal is to increase significantly the power density in comparison with actual converter solutions. This thesis evaluate the GaN components performances to determine the best working conditions. Once the critical points highlighted, gate circuit topologies suitable for EPC GaN HEMT are studied and an integrated IC is designed and implemented. The overall layout of the card has an important role in terms of integration and EMC optimization, so it is discussed and routing rules are proposed. Finally, we study several power structures and implement them to verify proper operation and their compliance with specifications.