Résumé
(Abstract) Data to reproduce the figures of the publication: M. Meyer, T. Fähndrich, S. Schmid, A. Wolf, S. S. Krishtopenko, B. Jouault, G. Bastard, F. Teppe, F. Hartmann , and S. Höfling, Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells, Phys. Rev. B 109, L121303 (2024), DOI: 10.1103/PhysRevB.109.L121303. This study demonstrates the coexistence of both normal and topological insulating phases in InAs/GaSb bilayer quantum well induced by the built-in electric field tuned optically and electrically. The findings pave the way for utilizing a different electro-optical tuning scheme to manipulate InAs/GaSb bilayer quantum wells to obtain trivial-topological insulating interfaces in the bulk rather than at the physical edge of the device. Please read the 'README' file.