Résumé
Due to the expansion of the portable applications and the battery operated products, great interest is given for design methodology for low consumption. When designing a process sensitive devices such as bandgap reference circuits (BGR), a perfect match between the simulation and the measurement on silicon have to be ensured. We present in this paper a very low current high temperature stability BiCMOS BGR design. A low current dedicated process characterization procedure is explained. The micro-power BGR design methodology is presented.