Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash

Viyas Gupta; Alexandre Louis Bosser; Lucas Matana Luza; Daniel Söderström; Arto Javanainen; Heikki Kettunen; Jaan Praks; Kay-Obbe Voss; Ari Virtanen; Luigi Dilillo

doi:10.1109/RADECS47380.2019.9745668

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Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash

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Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash

Viyas Gupta, Alexandre Louis Bosser, Lucas Matana Luza, Daniel Söderström, Arto Javanainen, Heikki Kettunen, Jaan Praks, Kay-Obbe Voss, Ari Virtanen et Luigi Dilillo

RADECS 2019 - 19th European Conference on Radiation and Its Effects on Components and Systems (Montpellier, France, 16/09/2019–20/09/2019)

2019

DOI: https://doi.org/10.1109/RADECS47380.2019.9745668

Résumé

Radiation testing

heavy-ion

NAND Flash

SEE

SEFI

Vertical error

Vertical line

Column error

The vertical line fault mechanism occurring in NAND flash devices under heavy-ion irradiation is described in detail. The location where the fault is generated as well as the recovery sequence are identified.

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Détails

Titre: Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash
Créateurs - sans rôle: Viyas Gupta - Agence Spatiale Européenne = European Space Agency
Alexandre Louis Bosser - Aalto University
Lucas Matana Luza - Test and dEpendability of microelectronic integrated SysTems
Daniel Söderström - University of Jyväskylä
Arto Javanainen - University of Jyväskylä
Heikki Kettunen - University of Jyväskylä
Jaan Praks - Aalto University
Kay-Obbe Voss - GSI Helmholtzzentrum für Schwerionenforschung
Ari Virtanen - University of Jyväskylä
Luigi Dilillo - Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier
Colloque: RADECS 2019 - 19th European Conference on Radiation and Its Effects on Components and Systems (Montpellier, France, 16/09/2019–20/09/2019)
Identifiants: 9943129709311
Unité académique: Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier - LIRMM
Langue: English
Type de ressource: Conference proceeding
Champs locaux: lirmm-03358989