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Unraveling the bandgap nature in hexagonal boron nitride
Acte de colloque

Unraveling the bandgap nature in hexagonal boron nitride

Guillaume Cassabois
UK Nitrides Consortium winter conference (Cambridge, United Kingdom, 06/01/2016)

Résumé

I will discuss our recent experiments by two-photon spectroscopy demonstrating that hBN is an indirect bandgap material. I will show that the optical properties of hBN are profoundly determined by phonon-assisted transitions involving either virtual or real excitonic states. I will present our measurements of the exciton binding energy by two-photon excitation, leading to the estimation of 6.08 eV for the single-particle bandgap in hBN.

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