Résumé
Single photon emission is one of the most striking optical properties of semiconductor quantum dots (QDs), and the corresponding photon anti-bunching effect was observed by non-resonant and resonant photoluminescence experiments in single QDs [1,2]. Up to now, all the measurements reported in the literature focus on the incoherent photoluminescence signal for achieving single photon emission. In this regime, the linewidth of the photoluminescence spectrum is limited to the so-called radiative limit. In this paper, we report on the resonant emission (RE) of the exciton in single InAs/GaAs QDs embedded in a planar microcavity [2]. We present an original type of single photon source based on the coherent laser light scattering by a single QD [3]. Besides the antibunching effect showing the nonclassical nature of the emitted light, we observe that the QD emission spectrum is determined by the spectrum of the resonant excitation laser. Figure (a,b,c) shows high-resolution measurements by Fourier transform spectroscopy of the RE where the data are fitted to the first-order correlation function g(1)(τ) of the RE of a two-level system. The inverse Fourier transform of the g(1)(τ) function allows a direct comparison of the different RE emission profiles in figure (d,e,f). By reducing the resonant excitation power, the Mollow triplet shrinks to a single narrow Lorentzian line, while the relative intensity of this narrow peak increases and tends to overwhelm the RE spectrum. This implies that single QDs can produce single photons with a coherence time that is not limited anymore by the QD electronic properties, resulting in an ultra-coherent character [3]. References [1] P. Michler et al, Science 290, 2282 (2000). [2] H. S. Nguyen et al, Phys. Rev. Lett. (accepted, in press). See arXiv 1109.4304. [3] H. S. Nguyen et al, Appl. Phys. Lett. 99, 261904 (2011).