Type II strain layer superlattices (SLS's) grown on GaAs substrates

Y. D. Sharma; G. Bishop; H. S. Kim; J. B. Rodriguez; E. Plis; G. Balakrishnan; L. R. Dawson; D. L. Huffaker; S. Krishna; IEEE

doi:10.1109/LEOS.2007.4382293

Acte de colloque

Type II strain layer superlattices (SLS's) grown on GaAs substrates

Y. D. Sharma, G. Bishop, H. S. Kim, J. B. Rodriguez, E. Plis, G. Balakrishnan, L. R. Dawson, D. L. Huffaker, S. Krishna et IEEE

2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, pp.96-97

IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting

01/01/2007

DOI: https://doi.org/10.1109/LEOS.2007.4382293

Résumé

Engineering

Engineering, Electrical & Electronic

Nanoscience & Nanotechnology

Optics

Physical Sciences

Science & Technology

Science & Technology - Other Topics

Technology

We report on type-II SLS's photodiodes grown on GaAs. The GaSb buffer was grown using a novel interfacial-misfit-approach, which relieves the strain though 900 misfit dislocations. The dark-current, quantum-efficiency and detectivity were measured.

Indicateurs

1 Consultations de la notice

Détails

Titre: Type II strain layer superlattices (SLS's) grown on GaAs substrates
Créateurs - sans rôle: Y. D. Sharma - Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
G. Bishop - Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
H. S. Kim - Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
J. B. Rodriguez - Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
E. Plis - Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
G. Balakrishnan - Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
L. R. Dawson - University of New Mexico
D. L. Huffaker - Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
S. Krishna - Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
IEEE
Détails de publication: 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, pp.96-97
Publications en série: IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting
Éditeur: IEEE
Nombre de pages: 2
Identifiants: 99139393709311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding