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Type-II Interband Cascade Laser Monolithically Integrated on Si Substrate
Acte de colloque   Open Access

Type-II Interband Cascade Laser Monolithically Integrated on Si Substrate

Maëva Fagot, Daniel Andrés Díaz-Thomas, Diba Ayache, Yves Rouillard, Aurore Vicet, Jean-Baptiste Rodriguez, Eric Tournié et Laurent Cerutti
Compound Semiconductor Week 2025 (Banff (Alberta), Canada, 27/05/2025–30/05/2025)

Résumé

III-V Laser on Silicon Mid-Infrared Interband Cascade Lasers III-V Laser on Silicon Mid-Infrared Interband Cascade Lasers
We present recent advances in type-II interband cascade lasers (ICLs) emitting in the 3-5 µm range, grown on silicon substrates that show tolerance to threading dislocations. The demonstration of single-mode distributed feedback (DFB) ICLs on silicon highlights their potential for integrated optical sensors in silicon photonics platforms.

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